Home Business ADVANCED Material Division Wafer Coating and MOD Liquids

ADVANCED Material Division

Based on our accumulated know-how,
we will put our company's extended development as our highest priority.

Home Business ADVANCED Material Div Wafer Coating and MOD Liquids

Wafer Coating and MOD Liquids


  • We have developed Sol-Gel and MOD solution for forming ferroelectric and high permittivity thin films by Spin-coating method.

Sol-Gel solution

•Sol-Gel liquid which enables to form dielectric thin film easily.

You can easily form ferroelectric thin films like PZT,SBT,BLT which have uniform composition and thickness, and Oxide thin films like LSCO, by applying and heat-treating this solution using metal alkoxide on each substrates with the spin-coating method.

•Sol-Gel Solution for FeRAM

•You can get More Uniform and Thinner Films by Lower Annealing Temperature

• Surface morphologies of PZT films

You can prepare film with excellent uniformity without using a seeding layer.

•Properties of PZT thin films

  • Films with good saturation characteristics
  • Film thickness down to 90nm without degradation of properties
  • Low drive voltage

•Low temperature preparation of PZT films (450℃)

You can get films with 2Pr > 20.

•Low temperature preparation of SBT films (650℃)

  • * Optimized 650 is Symetrix's proprietary process You can easily prepare SBT films by Modified Sol-Gel Solution using low temperature annealing
  • 1 ㎛ 두께가 넙는 필름 대상의 PZT 졸겔 용액
  • 1회 코팅으로 최고 1 ㎛ 두께의 PZT 필름을 얻을 수 있다!!

  • •Preparation of films

  • •Uniformity of film thickness

  • •Microstructures of single-coated films

    You can get film with excellent uniformity of thickness

  • •Microstructures of multicoated films

  • •Polarization and longitudinal strain hysteresis loops for multicoated films

  • • Good properties on each film

    • Choose the thickness you hope for your application.

  • •Densification of PZT thick film

    • You can easily get dense film by densification

    • The film is expected for low leakage current density

  • • ETC

    • PZT, PLZT – (Pb, La)(Zr,Ti)O3

    • SBT, SBTN – SrBi2(Ta, Nb)2O9

    • BST – (Ba,Sr)TiO3

    • LSCO – (La,Sr)CoO3

    • BLT, BIT – (Bi,La) 4Ti3O12

    • BSO – Bi2SiO5

    * We can also produce other solutions and solutions

    with dopants, Please feel free to ask us.

MOCVD source

•MOCVD source, which enables a high step coverage film

Conventional deposition methods such as sputtering and CSD are limited when applying devices with fine and multilayered structure for higher integration and higher speed operation. By comparison the MOCVD method has good coverage for fine and complicated substrate. Mitsubishi Materials Corporation has been developing metallo-organic compounds for MOCVD and MOCVD sources for liquid delivery system.

MOCVD is an ultimate film deposition technology.
We will support the next-generation semiconductor device from the viewpoint of user

TARGET

  We proceed the development of MOCVD materials for the next.
- generation semiconductor.

ADVANTAGE

  Distinction in materials, positive tie-up with device / process machine manufacture and the reliable supply system.

•Capacitor and electrode for memory device

Relationship between integration density and deposition method

•Capacitor and electrode for memory device

Relationship between integration density and deposition method

•We are considering adoption of Ru-MOCVD materials.